650SJ32,650SJ32超潔MOS管,11A/650V TO-252
650SJ32超潔MOS管,超潔MOS管650SJ32參數(shù)資料,650SJ32封裝TO-252,650SJ32中文資料規(guī)格書PDF
650SJ32超潔MOS管,超潔MOS管650SJ32參數(shù)資料,650SJ32封裝TO-252,650SJ32中文資料規(guī)格書PDF
650SJ32 TO-252封裝參數(shù)：點擊查看
650SJ32超潔MOS管參數(shù)具體如下：
極性：NPN
Drain-Source Voltage 漏源電壓Vds：650V
Gate-Source Voltage 柵源電壓Vgs：±30V
Continuous Drain Current 漏極電流Id Tc=25℃：11A
Power Dissipation 功率損耗Pd Ta=25℃：85W
Power Dissipation 功率損耗Pd Ta=70℃：W
Static Drain-Source On-Resistance 導(dǎo)通電阻ID=2A,VGS=10V： Typ 0.35Ω Max 0.39Ω
Static Drain-Source On-Resistance 導(dǎo)通電阻ID=Typ Ω Max Ω
Junction and Storage Temperature Range 溫度范圍：-55~+150℃
650SJ32超潔MOS管TO-252封裝尺寸：
650SJ32超潔MOS管/TO-220封裝尺寸：
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